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| CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor Spec. No. : C305S3 Issued Date : 2002.06.11 Revised Date : 2002.11.01 Page No. : 1/4 BTA1577S3 Description * The BTA1577S3 is designed for use in driver stage of AF amplifier and general purpose amplification. * Large IC . IC Max .= -0.6A * Low Vce(set). Edeal for low-Voltage operation TYP.Vce(set) =0.2V at IC/IB = 300mA / 30mA * Complementary to BTC4097S3. Equivalent Circuit BTA1577S3 SOT-323 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -40 -32 -5 -0.6 225 150 -55~+150 Unit V V V A mW C C BTA1577S3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -32 -5 82 Typ. -101 -62 -8.9 -0.03 0 -0.25 212 200 7 Max. -1.0 -1.0 -0.5 390 Unit V V V uA uA V MHz pF Spec. No. : C305S3 Issued Date : 2002.06.11 Revised Date : 2002.11.01 Page No. : 2/4 Test Conditions IC=-10uA IC=-1mA IE=-100uA VCB=-20V VEB=-4V IC=-100mA, IB=-10mA VCE=-3V, IC=-100mA VCE=-10V, IC=-1mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% Classification Of hFE1 Rank Range P 82~180 Q 120~270 R 180~390 BTA1577S3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) HFE@VCE=3V Current Gain---HFE 1000 Spec. No. : C305S3 Issued Date : 2002.06.11 Revised Date : 2002.11.01 Page No. : 3/4 Saturation Voltage vs Collector Current VCE(SAT)@IC=10IB 100 100 10 0.1 1 10 100 1000 Collector Current---IC(mA) 10 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 1000 Cutoff Frequency-FT(GHZ) Saturation Voltage---(mV) 1 Cutoff Frequency vs Collector Current FT@VCE=5V VBE(SAT)@IC=10IB 100 0.1 1 10 100 1000 Collector Current---IC(mA) 0.1 1 10 Collector Current---IC(mA) 100 PD - Ta 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- Ta( ) BTA1577S3 CYStek Product Specification CYStech Electronics Corp. SOT-323 Dimension Spec. No. : C305S3 Issued Date : 2002.06.11 Revised Date : 2002.11.01 Page No. : 4/4 3 A Marking: A1 Q Lp detail Z W B C 1 e1 e D bp 2 TE 2T E A Z He 0 1 scale 2 mm 3-Lead SOT-323 Pastic Surface Mounted Package CYStek Package Code: S3 v A Style: Pin 1.Base 2.Emitter 3.Collector *: Typical DIM A A1 bp C D E e Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - Inches DIM Min. Max. e1 0.0256 He 0.0787 0.0886 Lp 0.0059 0.0177 Q 0.0051 0.0091 v 0.0079 w 0.0079 Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10 0 Notes: 1.Dimension and tolerance based on our Spec. dated Feb. 27.002. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1577S3 CYStek Product Specification |
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